1 item symbol ratings unit drain-source voltage v ds 500 v dsx *5 500 continuous drain current i d 25 pulsed drain current i d(puls] 100 gate-source voltage v gs 30 repetitive or non-repetitive i ar *2 25 maximum avalanche energy e as *1 336.5 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 2.50 tc=25 c 335 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2sk3522-01 fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =500v v gs =0v v ds =400v v gs =0v v gs =30v i d =10.5a v gs =10v i d =10.5a v ds =25v v cc =300v i d =10.5a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.373 50.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =300v i d =21a v gs =10v l=987 h t ch =25c i f =21a v gs =0v t ch =25c i f =21a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c 500 3.0 5.0 25 250 10 100 0.20 0.26 11 22 2280 3420 320 480 16 24 27 41 37 56 75 113 11 17 54 81 16 24 20 30 25 0.98 1.50 0.7 10.0 -55 to +150 outline drawings [mm] equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series *3 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < = < 200401 *1 l=987h, vcc=50v, see to avalanche energy graph *2 tch 150c = < *4 vds 500v *5 v gs =-30v < = 11.60.2
2 characteristics 2sk3522-01 fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c rds(on)=f(id):80s pulse test, tch=25c 0 2 4 6 8 101214161820 0 5 10 15 20 25 30 35 40 45 50 55 20v 7.0v 10v 8v 6.5v 6.0v id [a] vds [v] typical output characteristics vgs=5.5v 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance 0 5 10 15 20 25 30 35 40 45 50 55 0.0 0.1 0.2 0.3 0.4 0.5 0.6 7.0v 6.5v rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 6.0v vgs= 5.5v -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=10.5a,vgs=10v 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 allowable power dissipation pd=f(tc) pd [w] tc [ c]
3 2sk3522-01 fuji power mosfet vgs=f(qg):id=21a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=300v, vgs=10v, rg=10 ? vgs(th)=f(tch):vds=vgs,id=250a -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th) [v] tch [ c] 0 20406080100120 0 2 4 6 8 10 12 14 16 18 20 22 24 vcc= 100v vcc= 400v qg [nc] typical gate charge characteristics vgs [v] vcc= 250v 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 c [nf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] id [a] 0 255075100125150 0 200 400 600 800 1000 i as =10a i as =25a i as =15a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e as =f(starting tch):vcc=50v
4 2sk3522-01 fuji power mosfet http://www.fujielectric.co.jp/denshi/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=50v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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